Silicon nitride - PDFSEARCH.IO - Document Search Engine

Silicon nitride
Results: 161

#	Item
21	NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from Add to Reading List Source URL: cdn.macom.com Language: English - Date: 2014-04-22 08:58:19
22	NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz Add to Reading List Source URL: cdn.macom.com Language: English - Date: 2014-04-11 09:32:48
23	NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Add to Reading List Source URL: cdn.macom.com Language: English - Date: 2014-04-14 12:40:11
24	Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin Add to Reading List Source URL: www.elite-map.techfak.uni-erlangen.de Language: English - Date: 2015-04-14 06:47:39 Fraunhofer Society Laboratories Gallium nitride Silicon carbide Semiconductor device Light-emitting diode Solid Single crystal Gallium Chemistry Matter Nitrides
25	GaN Manifesto John Croteau President and CEO The Path to Mainstream GaN Commercialization Add to Reading List Source URL: www.macom.com Language: English - Date: 2014-05-12 09:10:47 Semiconductor devices Solar cells Gallium nitride Nitrides IQE Gallium arsenide ANADIGICS Light-emitting diode Silicon carbide Chemistry Compound semiconductors Inorganic compounds
26	NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz Add to Reading List Source URL: cdn.macom.com Language: English - Date: 2014-04-11 09:34:31 Resistor Output impedance
27	LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR Add to Reading List Source URL: shop.emscdn.com Language: English - Date: 2010-06-24 13:14:53 Inorganic compounds Semiconductor devices Lighting Light-emitting diode Gallium phosphide Indium gallium nitride Gallium nitride Gallium arsenide Silicon carbide Chemistry Nitrides Compound semiconductors
28	F R A U N H O F E R - I N S T I T U T F Ü R I nte g rierte S y ste m e un d B aue l e m entete c hno l o g ie I I S B Materials for Electronics 1 Add to Reading List Source URL: www.iisb.fraunhofer.de Language: English - Date: 2015-06-09 12:08:16 Superhard materials Nanomaterials Printed electronics Fraunhofer Society Silicon carbide Nanoparticle Gallium nitride Nanoelectronics Organic electronics Chemistry Materials science Ultraviolet radiation
29	Coupling Effect between Silicon Nitride Optical Waveguide and Gold Nanoparticle Chain in the Visible Spectrum 1, 2 Yida Wen 1 Add to Reading List Source URL: www.chaire-psa.u-psud.fr Language: English - Date: 2014-07-03 10:37:27 Metamaterials Electromagnetism Nanomaterials Waveguide Surface plasmon resonance Plasmonic Nanoparticles Plasmon Nanoparticle Evanescent wave Physics Nanotechnology Optics
30	Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin Add to Reading List Source URL: www.elite-map.tf.uni-erlangen.de Language: English - Date: 2015-04-14 06:47:39 Fraunhofer Society Laboratories Gallium nitride Silicon carbide Semiconductor device Light-emitting diode Solid Single crystal Gallium Chemistry Matter Nitrides

UPDATE